物联网(IoT)已经开始影响消费者的日常生活, 但是工业将会看到更剧烈的影响. 从农业到制造业, industrial IoT applications, made possible by pervasive, intelligent connectivity—and enhanced by 5G deployments and AI at the edge—are leading the way in the world’s ongoing digital transformation.
GlobalFoundries® (GF®)为设计师提供广泛的性能组合, 电力和区域优化的解决方案，旨在帮助带来工业4.0 products to life: from industrial and security MCUs that leverage 22FDX® FD-SOI and 40 nm bulk CMOS solutions with eNVM, to 22FDX-based wireless connectivity solutions and power ASSPs built on GF BCDLite® solutions.
The industrial IoT (IIoT) infrastructure transformation that is making Industry 4.0现实严重依赖于微控制器单元(mcu). 这些mcu必须提供新水平的终端人工智能(AI), processing efficiency, ultra-low power, security and reliability.
The GlobalFoundries® (GF®) portfolio of proven, 灵活的MCU解决方案是汽车级合格的, 确保广泛的工业应用的可靠可靠性, including motor control, process control, robotics, 智能电网计量监测. 该作品集为设计师提供了广泛的区域选择, performance and power-optimized solution and enables them to leverage embedded memories, 宽工作温度范围, 高可靠性和低成本的口罩计数选项.
90% of firms estimate that an hour of shop-floor downtime is worth as much as $300,000. 四分之一的人表示，每小时的成本可能高达100万至500万美元.*
GlobalFoundries® (GF®) 22FDX® solutions, featuring low power, adaptive body bias, 模拟扩展和鲁棒的eNVM功能, enable integrated, 区域和功率优化的工业mcu. 解决方案包括eMRAM, low-cost charge trap technology (CTT) and CB-RAM embedded memory for faster TTM and wakeup times.
22FDX® offers best-in-class performance at the industry’s lowest operating voltage for bulk CMOS technologies (0.4v)和1pa /µm的超低备用泄漏. It features an eMRAM NVM with >100x lower write power* that enables frequent, power-saving shutdowns to help designers extend battery life while boosting processing capability.
22FDX® solutions enable designers to develop RF front-end modules (FEMs) with outstanding PA efficiency, LNA noise figure, 和开关插入损耗的好处. These FEMs, baseband and eMRAM elements can be integrated into a single IIoT SoC that helps designers combine the features needed to meet goals, 同时大大减少了总体面积和成本.
22FDX®产品组合的硅证明, MCU-optimized IP, along with a broad range of services and solutions available through GF and the FDXcelerator™ partner program, can help designers reduce development time and have confidence in first-time-right results in hardware.
GlobalFoundries® (GF®) 55LPX和40LP与eNVM和28SLP-ESF3, 构建在大量CMOS平台上, 对功率性能和成本敏感的MCU应用范围进行了优化, including automotive, baseband SoCs, mobile multimedia, digital TVs/STBs, IoT and industrial. 这些解决方案使设计师能够利用逻辑, analog, RF, ULP SRAM/logic combinations, 高k金属栅极技术，可靠性高, 以及车载内存(eNVM)，以获得更快的唤醒时间, 降低系统成本，提高安全性:
- 55LPx features high reliability (automotive-grade IP) and high-density, low-power SRAM
- 28SLP对功率进行了优化, performance and die cost, 当需要灵活的混合技术选择射频和超低功耗时
- ESF3 eFlash增加了健壮的质量和可靠性, 在恶劣的温度条件下提供零故障率
GF 55LPX and 40LP solutions are in high-volume production and feature world-class D0 (< 0.04 def/in2) defect density.
55LPx solutions are excellent fits for analog and power devices operating at 30 V and beyond; it is optimized for integrated analog, 电源和混合信号应用，如移动设备的pmic, 音频放大器和需要密集数字的应用, analog and power elements.
40LP solutions are ideal for power- and price-sensitive mobile and wireless applications. 它们具有灵活的射频和低电压混合技术选项.
28SLP solutions use up to 40% less power and 50% less area at significantly lower cost than comparable 40 nm technologies. 他们的ULP选项可以提供额外的40%的电力节省.
并不是所有的功率mosfet都适合这些苛刻的工业应用. 设计工程师开发过程和电机控制的动力assp, 通讯基础设施, CCTV security and traffic monitoring/signaling require unparalleled reliability and performance, even at high voltages. GF’s power ASSP solutions have the proven efficiency and reliability to meet these requirements.
功率ASSPs采用55nm BCDLite®和130nm BCD/BCDLite®
GlobalFoundries® (GF®) 55 nm BCDLite® and 130 nm BCD/BCDLite® solutions enable designers to harness low-power logic enabled by optimized, low-voltage CMOS. Included are low/medium/high/ very-high-voltage extended drain and laterally double-diffused MOSFET transistors, 以及精密模拟无源和非易失性存储器, 所有这些都使可靠性更加可靠, significant performance, 电压处理和成本效益. The solutions feature best-in-class power FETs that enable smaller dies and improved power conversion efficiency.
GF high-voltage BCD power FETs (40 V, up to 85 V), deliver industry-leading performance.
GF was first to offer a 55 nm BCD solution (55 nm BCDLite), with shipments now topping 3 billion ICs.
GF power FETs provide up to 50% reduction in on-resistance versus earlier GF BCDLite processes, enabling, for example, a 30% smaller die for a step-down buck switching regulator application where power FETs occupy ~60% of the die area.
55nm BCDLite提供一流的Rsp versus BVdss 最大的功率效率和更小的解决方案的性能. This is combined with high-density logic that enables advanced integration and area-efficient designs.
55 nm BCDLite and 130 nm BCD/BCDLite solutions feature world-class defect density (< 0.04 def/in2)，并在大量生产, enabling customers to meet market demand at the high reliability that today’s power management products demand.
Wireless communications for industrial IoT (IIoT) hardware must deliver reliable connectivity with low latency to support the increasingly rigorous requirements in applications such as remote sensors with embedded artificial intelligence (AI) at the edge.
The demands on this hardware keep growing as cellular (NB-IoT/LTE-M) and Wi-Fi connectivity continue to supplement or replace existing wired/Ethernet connections to further enable robotics, 高温环境下自动化与智能连接的应用, 嘈杂的制造环境 .
22FDX® from GlobalFoundries® (GF®) is the industry’s first and only 22 nm fully-depleted silicon-on-insulator solution. 它具有finfet般的性能和更小的面积, 成本与28纳米CMOS平面技术相当. These benefits, 与它的高性能射频组合, high-density digital logic and reliable non-volatile memory (NVM) features—along with high-voltage transistors and ultra-low dynamic and leakage power—make 22FDX® solutions a perfect fit for industrial IoT (IIoT) applications.
22FDX® can help designers maximize battery life by reducing power up to 70% compared to 28 nm bulk CMOS solutions.
The isolated channel in 22FDX® reduces capacitance along with thermal and flicker (1/f) noise, enabling high-performance RF transceivers that can reliably receive data over longer distances in noisy industrial environments, 不产生多余热量. Additionally, integrated high-voltage devices support high-efficiency RF power amplifiers and power conversion for ultra-reliable, 低功耗无线连接.
22FDX®自适应身体偏置使高密度, 尖端AI等先进功能的高性能数字元素, in a small footprint. 因为它可以在500兆赫兹的极低工作电压(0.4 V Vdd) with < 1 pA/bit SRAM leakage current, 基于22fdx的设备可以在小型设备上运行多年, inexpensive batteries, 无需增加工厂供电电缆.
22FDX®MRAM耐力在125°C 20年, 远高于工业-40到105°C的最高标准. This versatile eMRAM technology is designed for code storage (flash) and offers customers proven, 高效的嵌入式非易失性存储器(eNVM)用于快速的字段更新, 快速的起床时间和增加的安全性, 更快的上市时间.